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X-ray absorption fine structure and electron energy loss spectroscopy study of silicon nanowires at the Si L-3,L-2 edge

dc.contributor.authorSun, XHen_US
dc.contributor.authorTang, YHen_US
dc.contributor.authorZhang, P.en_US
dc.contributor.authorNaftel, SJen_US
dc.contributor.authorSammynaiken, R.en_US
dc.contributor.authorSham, TKen_US
dc.contributor.authorPeng, HYen_US
dc.contributor.authorZhang, YFen_US
dc.contributor.authorWong, NBen_US
dc.contributor.authorLee, STen_US
dc.date.accessioned2013-08-12T16:55:58Z
dc.date.available2013-08-12T16:55:58Z
dc.date.issued2001-12en_US
dc.description.abstractNo abstract available.en_US
dc.identifier.citationReproduced from Sun, XH, YH Tang, P. Zhang, SJ Naftel, et al. 2001. "X-ray absorption fine structure and electron energy loss spectroscopy study of silicon nanowires at the Si L-3,L-2 edge." Journal of Applied Physics 90(12): 6379-6383, with the permission of AIP Publishing.en_US
dc.identifier.issn0021-8979en_US
dc.identifier.issue12en_US
dc.identifier.startpage6379en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1417997en_US
dc.identifier.urihttp://hdl.handle.net/10222/30977
dc.identifier.volume90en_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleX-ray absorption fine structure and electron energy loss spectroscopy study of silicon nanowires at the Si L-3,L-2 edgeen_US
dc.typearticleen_US

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