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Two-component scaling near the metal-insulator bifurcation in two dimensions

Date

2003-05/15

Authors

Geldart, D. J. W.
Neilson, D.

Journal Title

Journal ISSN

Volume Title

Publisher

APS through AIP

Abstract

We consider a two-component scaling picture for the resistivity of two-dimensional (2D) weakly disordered interacting electron systems at low temperature with the aim of describing both the vicinity of the bifurcation and the low resistance metallic regime in the same framework. We contrast the essential features of one-component and two-component scaling theories. We discuss why the conventional lowest order renormalization group equations do not show a bifurcation in 2D, and a semiempirical extension is proposed which does lead to bifurcation. Parameters, including the product zN, are determined by least squares fitting to experimental data. An excellent description is obtained for the temperature and density dependence of the resistance of silicon close to the separatrix. Implications of this two-component scaling picture for a quantum critical point are discussed

Description

Keywords

Bifurcation, Density, Electrical resistivity, Electron correlations, Elemental semiconductors, Least squares approximations, Metal-insulator transition, Renormalisation, Scaling phenomena, Silicon, Two-dimensional electron gas

Citation

Geldart, D. J. W., and D. Neilson. 2003. "Two-component scaling near the metal-insulator bifurcation in two dimensions." Physical Review B (Condensed Matter and Materials Physics) 67(20): 205309-1. Copyright © 2003 American Physical Society.

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