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Temperature dependent resistivity in the low-resistance region for diffusive transport in two dimensions

dc.contributor.authorGeldart, D. J. W.en_US
dc.contributor.authorNeilson, D.en_US
dc.date.accessioned2013-06-19T17:26:26Z
dc.date.available2013-06-19T17:26:26Z
dc.date.issued2004-12/15en_US
dc.description.abstractThe interpretation of the metal-insulator transition phenomena in disordered two-dimensional electron systems in terms of density-dependent scaling variables suggests the existence of a quantum critical point at some critical electron density. However a first principles scaling theory based on renormalization group (RG) methods predicts a strong temperature dependence of the dimensionless resistivity R(T), even at small R(T), that is not observed. The observed properties are in fact consistent with a weakly disordered Fermi liquid, and there are no indications of strong temperature dependence induced by scaling. While the RG expansion in a power series in R(T) has only been evaluated to lowest order, this should be sufficient to describe experiments in the region of very small R. A further apparent anomaly is a return from metal-like to insulating-like behavior for increasing density. We explain these fundamental discrepancies between the first principles theory and experiment. We find that the R1 data in the currently attainable temperature range are in a weak scaling regime described by the logarithmic approximation. We independently determine the density dependent prefactor of the logarithm using data for the spin susceptibility and effective mass. We find good agreement between theory and experiment for R(T) in the diffusive regime. We point out that there are corrections to the leading logarithm approximation that should be observable at still lower temperaturesen_US
dc.identifier.citationGeldart, D. J. W., and D. Neilson. 2004. "Temperature dependent resistivity in the low-resistance region for diffusive transport in two dimensions." Physical Review B (Condensed Matter and Materials Physics) 70(23): 235336-1. Copyright © 2004 American Physical Society.en_US
dc.identifier.issn0163-1829en_US
dc.identifier.issue23en_US
dc.identifier.startpage235336en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.70.235336en_US
dc.identifier.urihttp://hdl.handle.net/10222/25105
dc.identifier.volume70en_US
dc.publisherAPS through AIPen_US
dc.relation.ispartofPhysical Review B (Condensed Matter and Materials Physics)en_US
dc.subjectAb initio calculationsen_US
dc.subjectEffective massen_US
dc.subjectElectrical resistivityen_US
dc.subjectElectron densityen_US
dc.subjectFermi liquiden_US
dc.subjectMetal-insulator transitionen_US
dc.subjectMinimum metallic conductivityen_US
dc.subjectRenormalisationen_US
dc.subjectTwo-dimensional electron gasen_US
dc.titleTemperature dependent resistivity in the low-resistance region for diffusive transport in two dimensionsen_US
dc.typearticleen_US

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