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Vertical nanowire light-emitting diode

dc.contributor.authorKonenkamp, R.en_US
dc.contributor.authorWord, Robert C.en_US
dc.contributor.authorSchlegel, C.en_US
dc.date.accessioned2014-03-03T20:07:56Z
dc.date.available2014-03-03T20:07:56Z
dc.date.issued2004en_US
dc.description.abstractWe report room-temperature, white-color electroluminescence in vertically oriented ZnO nanowires. Excitonic luminescence around 380 nm is observed as a shoulder on a broader defect-related band covering all of the visible range and centered at 620 nm. The ZnO nanowires are grown in a low-temperature process on SnO2 -coated glass substrates, employing a technique that is suitable for large-area applications. The nanowires are robustly encapsulated in a thin polystyrene film deposited from high-molecular-weight solutions. Electron injection occurs through the transparent SnO2 layer, while hole injection is mediated by a p -doped polymer and an evaporated Au contact. Stable device operation is observed at ambient conditions on the time scale of 1 h. 2004 American Institute of Physics.en_US
dc.identifier.citationKonenkamp, R., Robert C. Word, and C. Schlegel. 2004. "Vertical nanowire light-emitting diode." Applied Physics Letters 85(24): 6004-6006.en_US
dc.identifier.issn00036951en_US
dc.identifier.issue24en_US
dc.identifier.startpage6004en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.1836873en_US
dc.identifier.urihttp://hdl.handle.net/10222/45136
dc.identifier.volume85en_US
dc.publisherAmerican Institute of Physics Incen_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleVertical nanowire light-emitting diodeen_US
dc.typeTexten_US

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