Density dependence of critical magnetic fields at the metal-insulator bifurcation in two dimensions
Date
2003-01/15
Authors
Geldart, D. J. W.
Neilson, D.
Journal Title
Journal ISSN
Volume Title
Publisher
APS through AIP
Abstract
The density dependence of the critical in-plane magnetic field Bc at the bifurcation of the resistivity of two-dimensional electron systems with low levels of disorder is determined using the spin-polarization dependence of the electron exchange-correlation hole. Recent numerical simulation results for ground-state energies also permit determination of the magnetic field Bpol(n) needed to saturate the spin polarization. The resulting picture gives a good account of reported experimental results for Bc as a function of electron density in p-type GaAs systems and indicates that the interactions between electrons play a crucial role in the bifurcation phenomenon
Description
Keywords
Bifurcation, Electron density, Electron-hole recombination, Exchange interactions (electron), Gallium arsenide, III-V semiconductors, Metal-insulator transition, Two-dimensional electron gas
Citation
Geldart, D. J. W., and D. Neilson. 2003. "Density dependence of critical magnetic fields at the metal-insulator bifurcation in two dimensions." Physical Review B (Condensed Matter and Materials Physics) 67(4): 45310-1. Copyright © 2003 American Physical Society.