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Density dependence of critical magnetic fields at the metal-insulator bifurcation in two dimensions

Date

2003-01/15

Authors

Geldart, D. J. W.
Neilson, D.

Journal Title

Journal ISSN

Volume Title

Publisher

APS through AIP

Abstract

The density dependence of the critical in-plane magnetic field Bc at the bifurcation of the resistivity of two-dimensional electron systems with low levels of disorder is determined using the spin-polarization dependence of the electron exchange-correlation hole. Recent numerical simulation results for ground-state energies also permit determination of the magnetic field Bpol(n) needed to saturate the spin polarization. The resulting picture gives a good account of reported experimental results for Bc as a function of electron density in p-type GaAs systems and indicates that the interactions between electrons play a crucial role in the bifurcation phenomenon

Description

Keywords

Bifurcation, Electron density, Electron-hole recombination, Exchange interactions (electron), Gallium arsenide, III-V semiconductors, Metal-insulator transition, Two-dimensional electron gas

Citation

Geldart, D. J. W., and D. Neilson. 2003. "Density dependence of critical magnetic fields at the metal-insulator bifurcation in two dimensions." Physical Review B (Condensed Matter and Materials Physics) 67(4): 45310-1. Copyright © 2003 American Physical Society.

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