Detection of a Fermi level crossing in three-domain Si(111)-In(4x1)

Abstract

Using photoemission and inverse photoemission, it has recently been demonstrated that single domain Si(111)-In(4 X 1) overlayers possess a clear Fermi level crossing at approximate to 0.6 azimuth of the 1 x I zone, which is coincident with the azimuth of the 4 X 1 zone, with inverse photoemission, and found a Fermi level crossing at approximate to 0.6. We have now detected Fermi level crossings in both single and three domain 4X1 overlayers. [S0163-1829(99)10415-6].