Negative electron-electron drag between narrow quantum Hall channels
Date
1998-03/15
Authors
Tso, H. C. W.
Geldart, D. J. W.
Vasilopoulos, P.
Journal Title
Journal ISSN
Volume Title
Publisher
APS through AIP
Abstract
Momentum transfer due to Coulomb interaction between two parallel, two-dimensional, narrow, and spatially separated layers, when a current Idrive is driven through one layer, is studied in the presence of a perpendicular magnetic field B. The current induced in the drag layer Idrag is evaluated self-consistently with Idrive as a parameter. Idrag can be positive or negative depending on the value of the filling factor N of the highest occupied bulk Landau level (LL). For a fully occupied LL, Idrag is negative, (i.e., it flows opposite to Idrive), whereas it is positive for a half-filled LL. When the circuit is opened in the drag layer, a voltage Vdrag develops in it; it is negative for a half-filled LL and positive for a fully occupied LL. This positive Vdrag expressing a negative Coulomb drag, results from energetically favored near-edge inter-LL transitions that occur when the highest occupied bulk LL and the LL just above it become degenerate
Description
Keywords
Landau levels, Quantum Hall effect
Citation
Tso, H. C. W., D. J. W. Geldart, and P. Vasilopoulos. 1998. "Negative electron-electron drag between narrow quantum Hall channels." Physical Review B (Condensed Matter) 57(11): 6561-5. Copyright © 1998 American Physical Society.