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Superconducting gap anisotropy vs doping level in high-T-c cuprates - Comment

dc.contributor.authorHewitt, K. C.en_US
dc.contributor.authorDevereaux, T. P.en_US
dc.contributor.authorChen, X. K.en_US
dc.contributor.authorWang, X. Z.en_US
dc.contributor.authorNaeini, J. G.en_US
dc.contributor.authorCurzon, A. E.en_US
dc.contributor.authorIrwin, J. C.en_US
dc.contributor.authorMartin, A.en_US
dc.date.accessioned2013-07-18T19:45:34Z
dc.date.available2013-07-18T19:45:34Z
dc.date.issued1997-06en_US
dc.description.abstractNo abstract available.en_US
dc.identifier.citationHewitt, K. C., T. P. Devereaux, X. K. Chen, X. Z. Wang, et al. 1997. "Superconducting gap anisotropy vs doping level in high-T-c cuprates - Comment." Physical Review Letters 78(25): 4891-4891. Copyright © 1997 American Physical Society.en_US
dc.identifier.issn0031-9007en_US
dc.identifier.issue25en_US
dc.identifier.startpage4891en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevLett.78.4891en_US
dc.identifier.urihttp://hdl.handle.net/10222/31249
dc.identifier.volume78en_US
dc.relation.ispartofPhysical Review Lettersen_US
dc.titleSuperconducting gap anisotropy vs doping level in high-T-c cuprates - Commenten_US
dc.typearticleen_US

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